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NGTB15N60R2FG

NGTB15N60R2FG

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制造商部分
NGTB15N60R2FG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
100
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:-
电压 - 集电极发射极击穿(最大值):600 V
电流 - 集电极 (ic) (max):24 A
电流 - 集电极脉冲 (icm):60 A
vce(on) (max) @ vge, ic:2.1V @ 15V, 15A
功率 - 最大值:54 W
开关能量:550µJ (on), 220µJ (off)
输入类型:Standard
栅极电荷:80 nC
td(开/关)@ 25°c:70ns/190ns
测试条件:300V, 15A, 30Ohm, 15V
反向恢复时间 (trr):95 ns
工作温度:175°C (TJ)
安装类型:Through Hole
包/箱:TO-220-3 Full Pack
供应商设备包:TO-220F-3FS

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