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| Type | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| igbt型: | - |
| 电压 - 集电极发射极击穿（最大值）: | - |
| 电流 - 集电极 (ic) (max): | - |
| 电流 - 集电极脉冲 (icm): | - |
| vce(on) (max) @ vge, ic: | - |
| 功率 - 最大值: | - |
| 开关能量: | - |
| 输入类型: | - |
| 栅极电荷: | - |
| td（开/关）@ 25°c: | - |
| 测试条件: | - |
| 反向恢复时间 (trr): | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
IRGP4620D-EPBFInternational Components Corp. |
IGBT WITH RECOVERY DIODE |
有存货: 1,386 $1.75000 |
 |
IXYH75N65C3H1Wickmann / Littelfuse |
IGBT 650V 170A 750W TO247 |
有存货: 9 $13.22000 |
 |
FGA25S125P-SN00337Fairchild (ON Semiconductor) |
INSULATED GATE BIPOLAR TRANSISTO |
有存货: 412 $2.77000 |
 |
STGP10NC60KDSTMicroelectronics |
IGBT 600V 20A 65W TO220 |
有存货: 0 $1.37000 |
 |
AIHD04N60RATMA1IR (Infineon Technologies) |
IC DISCRETE 600V TO252-3 |
有存货: 0 $0.77035 |
 |
SGB10N60AATMA1IR (Infineon Technologies) |
IGBT, 20A I(C), 600V V(BR)CES, N |
有存货: 5,999 $0.87000 |
 |
NGTB10N60R2DT4GSanyo Semiconductor/ON Semiconductor |
INSULATED GATE BIPOLAR TRANSISTO |
有存货: 2,630 $0.58000 |
 |
HGT1S20N60C3S9ASanyo Semiconductor/ON Semiconductor |
IGBT 600V 45A TO263AB |
有存货: 0 $4.16000 |
 |
STGWT20V60DFSTMicroelectronics |
IGBT 600V 40A 167W TO3P-3 |
有存货: 0 $3.13000 |
 |
IRGP4266D-EPBFInternational Components Corp. |
IGBT WITH RECOVERY DIODE |
有存货: 3,027 $5.55000 |
