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NGTB10N60R2DT4G

NGTB10N60R2DT4G

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制造商部分
NGTB10N60R2DT4G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
2630
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:-
电压 - 集电极发射极击穿(最大值):600 V
电流 - 集电极 (ic) (max):20 A
电流 - 集电极脉冲 (icm):40 A
vce(on) (max) @ vge, ic:2.1V @ 15V, 10A
功率 - 最大值:72 W
开关能量:412µJ (on), 140µJ (off)
输入类型:Standard
栅极电荷:53 nC
td(开/关)@ 25°c:48ns/120ns
测试条件:300V, 10A, 30Ohm, 15V
反向恢复时间 (trr):90 ns
工作温度:175°C (TJ)
安装类型:Surface Mount
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63
供应商设备包:DPAK

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