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NGTB15N135IHRWG

NGTB15N135IHRWG

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制造商部分
NGTB15N135IHRWG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
4680
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:Trench Field Stop
电压 - 集电极发射极击穿(最大值):1.35 V
电流 - 集电极 (ic) (max):30 A
电流 - 集电极脉冲 (icm):60 A
vce(on) (max) @ vge, ic:2.65V @ 15V, 15A
功率 - 最大值:357 W
开关能量:420µJ (off)
输入类型:Standard
栅极电荷:156 nC
td(开/关)@ 25°c:-/170ns
测试条件:600V, 15A, 10Ohm, 15V
反向恢复时间 (trr):-
工作温度:-40°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247

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