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FGH50N3

FGH50N3

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制造商部分
FGH50N3
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
437
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
igbt型:PT
电压 - 集电极发射极击穿(最大值):300 V
电流 - 集电极 (ic) (max):75 A
电流 - 集电极脉冲 (icm):240 A
vce(on) (max) @ vge, ic:1.4V @ 15V, 30A
功率 - 最大值:463 W
开关能量:130µJ (on), 92µJ (off)
输入类型:Standard
栅极电荷:180 nC
td(开/关)@ 25°c:20ns/135ns
测试条件:180V, 30A, 5Ohm, 15V
反向恢复时间 (trr):-
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247-3

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