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SCTWA90N65G2V-4

SCTWA90N65G2V-4

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制造商部分
SCTWA90N65G2V-4
制造商
STMicroelectronics
描述
TRANS SJT N-CH 650V 119A HIP247
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
63
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):650 V
电流 - 连续漏极 (id) @ 25°c:119A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:24mOhm @ 50A, 18V
vgs(th) (最大值) @ id:5V @ 1mA
栅极电荷 (qg) (max) @ vgs:157 nC @ 18 V
vgs (最大值):+22V, -10V
输入电容 (ciss) (max) @ vds:3380 pF @ 400 V
场效应管特征:-
功耗(最大值):565W (Tc)
工作温度:-55°C ~ 200°C (TJ)
安装类型:Through Hole
供应商设备包:HiP247™ Long Leads
包/箱:TO-247-3

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