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PSMN2R0-40YLDX

PSMN2R0-40YLDX

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制造商部分
PSMN2R0-40YLDX
制造商
Nexperia
描述
MOSFET N-CH 40V 180A LFPAK56
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1500
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):40 V
电流 - 连续漏极 (id) @ 25°c:180A (Ta)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:2.1mOhm @ 25A, 10V
vgs(th) (最大值) @ id:2.05V @ 1mA
栅极电荷 (qg) (max) @ vgs:92 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:6581 pF @ 20 V
场效应管特征:Schottky Diode (Body)
功耗(最大值):166W (Ta)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:LFPAK56, Power-SO8
包/箱:SC-100, SOT-669

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