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SSM6K217FE,LF

SSM6K217FE,LF

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制造商部分
SSM6K217FE,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET N-CH 40V 1.8A ES6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
39485
在线数据表
-
询问

Product Specifications

Type 描述
系列:U-MOSVII-H
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):40 V
电流 - 连续漏极 (id) @ 25°c:1.8A (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 8V
rds on (max) @ id, vgs:195mOhm @ 1A, 8V
vgs(th) (最大值) @ id:1.2V @ 1mA
栅极电荷 (qg) (max) @ vgs:1.1 nC @ 4.2 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:130 pF @ 10 V
场效应管特征:-
功耗(最大值):500mW (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:ES6
包/箱:SOT-563, SOT-666

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