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BSM600C12P3G201

BSM600C12P3G201

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制造商部分
BSM600C12P3G201
制造商
ROHM Semiconductor
描述
SICFET N-CH 1200V 600A MODULE
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tray
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:600A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:5.6V @ 182mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):+22V, -4V
输入电容 (ciss) (max) @ vds:28000 pF @ 10 V
场效应管特征:-
功耗(最大值):2460W (Tc)
工作温度:175°C (TJ)
安装类型:Chassis Mount
供应商设备包:Module
包/箱:Module

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