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PMV185XN,215

PMV185XN,215

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制造商部分
PMV185XN,215
制造商
NXP Semiconductors
描述
MOSFET N-CH 30V 1.1A TO236AB
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
268400
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:1.1A (Ta)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:250mOhm @ 1.1A, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:1.3 nC @ 4.5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:76 pF @ 15 V
场效应管特征:-
功耗(最大值):325mW (Ta), 1.275W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-236AB (SOT23)
包/箱:TO-236-3, SC-59, SOT-23-3

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