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BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1

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制造商部分
BSC042NE7NS3GATMA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 75V 19A/100A TDSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9991
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):75 V
电流 - 连续漏极 (id) @ 25°c:19A (Ta), 100A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:4.2mOhm @ 50A, 10V
vgs(th) (最大值) @ id:3.8V @ 91µA
栅极电荷 (qg) (max) @ vgs:69 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:4800 pF @ 37.5 V
场效应管特征:-
功耗(最大值):2.5W (Ta), 125W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-TDSON-8-1
包/箱:8-PowerTDFN

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