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AOV11S60

AOV11S60

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制造商部分
AOV11S60
制造商
Alpha and Omega Semiconductor, Inc.
描述
MOSFET N-CH 600V 650MA/8A 4DFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3819
在线数据表
-
询问

Product Specifications

Type 描述
系列:aMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Not For New Designs
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:650mA (Ta), 8A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:500mOhm @ 3.8A, 10V
vgs(th) (最大值) @ id:4.1V @ 250µA
栅极电荷 (qg) (max) @ vgs:11 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:545 pF @ 100 V
场效应管特征:-
功耗(最大值):8.3W (Ta), 156W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:4-DFN-EP (8x8)
包/箱:4-PowerTSFN

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