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RD3T050CNTL1

RD3T050CNTL1

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制造商部分
RD3T050CNTL1
制造商
ROHM Semiconductor
描述
MOSFET N-CH 200V 5A TO252
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1693
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:5A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:760mOhm @ 2.5A, 10V
vgs(th) (最大值) @ id:5.25V @ 1mA
栅极电荷 (qg) (max) @ vgs:8.3 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:330 pF @ 25 V
场效应管特征:-
功耗(最大值):29W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-252
包/箱:TO-252-3, DPak (2 Leads + Tab), SC-63

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