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MT47H512M4THN-25E:M

MT47H512M4THN-25E:M

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制造商部分
MT47H512M4THN-25E:M
制造商
Micron Technology
描述
IC DRAM 2GBIT PARALLEL 63FBGA
类别
集成电路
家庭
记忆
系列
-
有存货
2402
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tray
零件状态:Obsolete
内存类型:Volatile
内存格式:DRAM
技术:SDRAM - DDR2
内存大小:2Gb (512M x 4)
内存接口:Parallel
时钟频率:400 MHz
写周期时间 - 字,页:15ns
访问时间:400 ps
电压 - 电源:1.7V ~ 1.9V
工作温度:0°C ~ 85°C (TC)
安装类型:Surface Mount
包/箱:63-TFBGA
供应商设备包:63-FBGA (8x10)

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