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APTC80H29T1G

APTC80H29T1G

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制造商部分
APTC80H29T1G
制造商
Microsemi
描述
MOSFET 4N-CH 800V 15A SP1
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7768
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:4 N-Channel (H-Bridge)
场效应管特征:Standard
漏源电压 (vdss):800V
电流 - 连续漏极 (id) @ 25°c:15A
rds on (max) @ id, vgs:290mOhm @ 7.5A, 10V
vgs(th) (最大值) @ id:3.9V @ 1mA
栅极电荷 (qg) (max) @ vgs:90nC @ 10V
输入电容 (ciss) (max) @ vds:2254pF @ 25V
功率 - 最大值:156W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:SP1
供应商设备包:SP1

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