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IRF40H233ATMA1

IRF40H233ATMA1

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制造商部分
IRF40H233ATMA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 40V 35A 8PQFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7719
在线数据表
-
询问

Product Specifications

Type 描述
系列:StrongIRFET™
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):40V
电流 - 连续漏极 (id) @ 25°c:65A (Tc)
rds on (max) @ id, vgs:6.2mOhm @ 35A, 10V
vgs(th) (最大值) @ id:3.9V @ 50µA
栅极电荷 (qg) (max) @ vgs:57nC @ 10V
输入电容 (ciss) (max) @ vds:20V
功率 - 最大值:3.8W (Ta), 50W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerVDFN
供应商设备包:PG-TDSON-8-4

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