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QJD1210010

QJD1210010

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制造商部分
QJD1210010
制造商
Powerex, Inc.
描述
MOSFET 2N-CH 1200V 100A SIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7702
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Silicon Carbide (SiC)
漏源电压 (vdss):1200V (1.2kV)
电流 - 连续漏极 (id) @ 25°c:100A (Tc)
rds on (max) @ id, vgs:25mOhm @ 100A, 20V
vgs(th) (最大值) @ id:5V @ 10mA
栅极电荷 (qg) (max) @ vgs:500nC @ 20V
输入电容 (ciss) (max) @ vds:10200pF @ 800V
功率 - 最大值:1080W
工作温度:-40°C ~ 175°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:Module

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