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APT45GR65BSCD10

APT45GR65BSCD10

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制造商部分
APT45GR65BSCD10
制造商
Microsemi
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
9503
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
igbt型:NPT
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):118 A
电流 - 集电极脉冲 (icm):224 A
vce(on) (max) @ vge, ic:2.4V @ 15V, 45A
功率 - 最大值:543 W
开关能量:-
输入类型:Standard
栅极电荷:203 nC
td(开/关)@ 25°c:15ns/100ns
测试条件:433V, 45A, 4.3Ohm, 15V
反向恢复时间 (trr):80 ns
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3
供应商设备包:TO-247

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