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IRLBD59N04ETRLP

IRLBD59N04ETRLP

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制造商部分
IRLBD59N04ETRLP
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 40V 59A TO263-5
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9396
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):40 V
电流 - 连续漏极 (id) @ 25°c:59A (Tc)
驱动电压(最大 rds on,最小 rds on):5V, 10V
rds on (max) @ id, vgs:18mOhm @ 35A, 10V
vgs(th) (最大值) @ id:2V @ 250µA
栅极电荷 (qg) (max) @ vgs:50 nC @ 5 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:2190 pF @ 25 V
场效应管特征:-
功耗(最大值):130W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:TO-263-5
包/箱:TO-263-6, D²Pak (5 Leads + Tab), TO-263BA

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