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JAN2N6849U

JAN2N6849U

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制造商部分
JAN2N6849U
制造商
Microsemi
描述
MOSFET P-CH 100V 6.5A 18ULCC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9109
在线数据表
-
询问

Product Specifications

Type 描述
系列:Military, MIL-PRF-19500/564
包裹:Bulk
零件状态:Obsolete
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):100 V
电流 - 连续漏极 (id) @ 25°c:6.5A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:320mOhm @ 6.5A, 10V
vgs(th) (最大值) @ id:4V @ 250µA
栅极电荷 (qg) (max) @ vgs:34.8 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):800mW (Ta), 25W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:18-ULCC (9.14x7.49)
包/箱:18-CLCC

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