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APT25SM120S

APT25SM120S

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制造商部分
APT25SM120S
制造商
Microsemi
描述
SICFET N-CH 1200V 25A D3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9043
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:25A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:175mOhm @ 10A, 20V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:72 nC @ 20 V
vgs (最大值):-
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):175W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Chassis Mount
供应商设备包:D3
包/箱:D-3 Module

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