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APTML20UM18R010T1AG

APTML20UM18R010T1AG

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制造商部分
APTML20UM18R010T1AG
制造商
Microsemi
描述
MOSFET N-CH 200V 109A SP1
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8578
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:109A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:19mOhm @ 50A, 10V
vgs(th) (最大值) @ id:4V @ 2.5mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:9880 pF @ 25 V
场效应管特征:-
功耗(最大值):480W (Tc)
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
供应商设备包:SP1
包/箱:SP1

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