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CTLDM8120-M621H BK

CTLDM8120-M621H BK

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制造商部分
CTLDM8120-M621H BK
制造商
Central Semiconductor
描述
MOSFET P-CH 20V 950MA TLM621H
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8559
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:950mA (Ta)
驱动电压(最大 rds on,最小 rds on):1.8V, 4.5V
rds on (max) @ id, vgs:150mOhm @ 950mA, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:3.56 nC @ 4.5 V
vgs (最大值):8V
输入电容 (ciss) (max) @ vds:200 pF @ 16 V
场效应管特征:-
功耗(最大值):1.6W (Ta)
工作温度:-65°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:TLM621H
包/箱:6-XFDFN Exposed Pad

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