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RQA0002DNSTB-E

RQA0002DNSTB-E

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制造商部分
RQA0002DNSTB-E
制造商
Renesas Electronics America
描述
MOSFET N-CH 16V 3.8A 2HWSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8520
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):16 V
电流 - 连续漏极 (id) @ 25°c:3.8A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:750mV @ 1mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±5V
输入电容 (ciss) (max) @ vds:102 pF @ 0 V
场效应管特征:-
功耗(最大值):15W (Tc)
工作温度:150°C
安装类型:Surface Mount
供应商设备包:2-HWSON (5x4)
包/箱:3-DFN Exposed Pad

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