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BSM100GB120DN2HOSA1

BSM100GB120DN2HOSA1

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制造商部分
BSM100GB120DN2HOSA1
制造商
IR (Infineon Technologies)
描述
IGBT MOD 1200V 150A 800W
类别
分立半导体产品
家庭
晶体管 - igbts - 模块
系列
-
有存货
5424
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tray
零件状态:Not For New Designs
igbt型:-
配置:Half Bridge
电压 - 集电极发射极击穿(最大值):1200 V
电流 - 集电极 (ic) (max):150 A
功率 - 最大值:800 W
vce(on) (max) @ vge, ic:3V @ 15V, 100A
电流 - 集电极截止(最大值):2 mA
输入电容 (cies) @ vce:6.5 nF @ 25 V
输入:Standard
ntc热敏电阻:No
工作温度:150°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:Module

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