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BSM120C12P2C201

BSM120C12P2C201

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制造商部分
BSM120C12P2C201
制造商
ROHM Semiconductor
描述
1200V, 134A, CHOPPER, SILICON-CA
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
12
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel
场效应管特征:Silicon Carbide (SiC)
漏源电压 (vdss):1200V (1.2kV)
电流 - 连续漏极 (id) @ 25°c:134A (Tc)
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:4V @ 22mA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:14000pF @ 10V
功率 - 最大值:935W (Tc)
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:Module

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