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APTM100H46FT3G

APTM100H46FT3G

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制造商部分
APTM100H46FT3G
制造商
Roving Networks / Microchip Technology
描述
MOSFET 4N-CH 1000V 19A SP3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4659
在线数据表
-
询问

Product Specifications

Type 描述
系列:POWER MOS 8™
包裹:Bulk
零件状态:Active
场效应管类型:4 N-Channel (H-Bridge)
场效应管特征:Standard
漏源电压 (vdss):1000V (1kV)
电流 - 连续漏极 (id) @ 25°c:19A
rds on (max) @ id, vgs:552mOhm @ 16A, 10V
vgs(th) (最大值) @ id:5V @ 2.5mA
栅极电荷 (qg) (max) @ vgs:260nC @ 10V
输入电容 (ciss) (max) @ vds:6800pF @ 25V
功率 - 最大值:357W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:SP3
供应商设备包:SP3

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