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SI8902AEDB-T2-E1

SI8902AEDB-T2-E1

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制造商部分
SI8902AEDB-T2-E1
制造商
Vishay / Siliconix
描述
N-CHANNEL 24-V (D-S) MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4389
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:2 N-Channel (Dual)
场效应管特征:Standard
漏源电压 (vdss):24V
电流 - 连续漏极 (id) @ 25°c:11A
rds on (max) @ id, vgs:28mOhm @ 1A, 4.5V
vgs(th) (最大值) @ id:900mV @ 250µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:5.7W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-UFBGA
供应商设备包:6-Micro Foot™ (1.5x1)

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