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SISF02DN-T1-GE3

SISF02DN-T1-GE3

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制造商部分
SISF02DN-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET DUAL N-CH 25V 1212-8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
45
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen IV
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Common Drain
场效应管特征:Standard
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:30.5A (Ta), 60A (Tc)
rds on (max) @ id, vgs:3.5mOhm @ 7A, 10V
vgs(th) (最大值) @ id:2.3V @ 250µA
栅极电荷 (qg) (max) @ vgs:56nC @ 10V
输入电容 (ciss) (max) @ vds:2650pF @ 10V
功率 - 最大值:5.2W (Ta), 69.4W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:PowerPAK® 1212-8SCD
供应商设备包:PowerPAK® 1212-8SCD

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