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EFC3J018NUZTDG

EFC3J018NUZTDG

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制造商部分
EFC3J018NUZTDG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET 2N-CH 20V 23A 6WLCSP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4118
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Common Drain
场效应管特征:Logic Level Gate, 2.5V Drive
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:23A (Ta)
rds on (max) @ id, vgs:4.7mOhm @ 5A, 4.5V
vgs(th) (最大值) @ id:1.3V @ 1mA
栅极电荷 (qg) (max) @ vgs:75nC @ 4.5V
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:2.5W (Ta)
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:6-XFBGA, WLCSP
供应商设备包:6-WLCSP (1.77x3.05)

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