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APTM50DHM38G

APTM50DHM38G

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制造商部分
APTM50DHM38G
制造商
Roving Networks / Microchip Technology
描述
MOSFET 2N-CH 500V 90A SP6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
4081
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:2 N-Channel (Dual) Asymmetrical
场效应管特征:Standard
漏源电压 (vdss):500V
电流 - 连续漏极 (id) @ 25°c:90A
rds on (max) @ id, vgs:45mOhm @ 45A, 10V
vgs(th) (最大值) @ id:5V @ 5mA
栅极电荷 (qg) (max) @ vgs:246nC @ 10V
输入电容 (ciss) (max) @ vds:11200pF @ 25V
功率 - 最大值:694W
工作温度:-40°C ~ 150°C (TJ)
安装类型:Chassis Mount
包/箱:SP6
供应商设备包:SP6

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