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NESG2101M05-T1-A

NESG2101M05-T1-A

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制造商部分
NESG2101M05-T1-A
制造商
Renesas Electronics America
描述
NESG2101 - NPN SIGE RF TRANSISTO
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 射频
系列
-
有存货
9000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
晶体管型:NPN
电压 - 集电极发射极击穿(最大值):5V
频率转换:17GHz
噪声系数 (db typ @ f):0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
获得:11dB ~ 19dB
功率 - 最大值:500mW
直流电流增益 (hfe) (min) @ ic, vce:130 @ 15mA, 2V
电流 - 集电极 (ic) (max):100mA
工作温度:-
安装类型:Surface Mount
包/箱:SOT-343F
供应商设备包:M05

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