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| Type | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| igbt型: | Trench Field Stop |
| 电压 - 集电极发射极击穿（最大值）: | 650 V |
| 电流 - 集电极 (ic) (max): | 150 A |
| 电流 - 集电极脉冲 (icm): | 300 A |
| vce(on) (max) @ vge, ic: | 2.1V @ 15V, 75A |
| 功率 - 最大值: | 455 W |
| 开关能量: | 1.06mJ (on), 1.56mJ (off) |
| 输入类型: | Standard |
| 栅极电荷: | 126 nC |
| td（开/关）@ 25°c: | 55ns/189ns |
| 测试条件: | 400V, 75A, 15Ohm, 15V |
| 反向恢复时间 (trr): | 36 ns |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-4 |
| 供应商设备包: | TO-247-4 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
|
HGTH20N50C1 |
20A, 500V, N-CHANNEL IGBT |
有存货: 4,984 $6.29000 |
|
HGTH20N40C1D |
20A, 400V, N-CHANNEL IGBT |
有存货: 74 $3.14000 |
|
HGTH20N50E1 |
20A, 500V, N-CHANNEL IGBT |
有存货: 287 $3.14000 |
|
FF450R12ME4IR (Infineon Technologies) |
INSULATED GATE BIPOLAR TRANSISTO |
有存货: 48 $148.25000 |
|
AFGY120T65SPDSanyo Semiconductor/ON Semiconductor |
IGBT - 650 V 120 A FS3 FOR EV TR |
有存货: 0 $9.94000 |
|
RJP6065DPE-00#J3Renesas Electronics America |
IGBT |
有存货: 1,000 $1.64000 |
|
HGTA32N60E2 |
32A, 600V N-CHANNEL IGBT |
有存货: 215 $10.60000 |
|
FZ2400R12HP4NPSA1IR (Infineon Technologies) |
INSULATED GATE BIPOLAR TRANSISTO |
有存货: 60 $745.73000 |
|
IXXH40N65C4D1Wickmann / Littelfuse |
DISC IGBT XPT-GENX4 TO-247AD |
有存货: 0 $4.85640 |
|
IXBF42N300Wickmann / Littelfuse |
IGBT 3000V TO247 |
有存货: 325 $48.62240 |
