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MSC080SMA120B4

MSC080SMA120B4

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制造商部分
MSC080SMA120B4
制造商
Roving Networks / Microchip Technology
描述
TRANS SJT N-CH 1200V 37A TO247-4
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
109
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiC (Silicon Carbide Junction Transistor)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:37A (Tc)
驱动电压(最大 rds on,最小 rds on):20V
rds on (max) @ id, vgs:100mOhm @ 15A, 20V
vgs(th) (最大值) @ id:2.8V @ 1mA
栅极电荷 (qg) (max) @ vgs:64 nC @ 20 V
vgs (最大值):+23V, -10V
输入电容 (ciss) (max) @ vds:838 pF @ 1000 V
场效应管特征:-
功耗(最大值):200W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-247-4
包/箱:TO-247-4

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