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NTMFS6H818NLT1G

NTMFS6H818NLT1G

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制造商部分
NTMFS6H818NLT1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 80V 22A/135A 5DFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
18000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):80 V
电流 - 连续漏极 (id) @ 25°c:22A (Ta), 135A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:3.2mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2V @ 190µA
栅极电荷 (qg) (max) @ vgs:64 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:3844 pF @ 40 V
场效应管特征:-
功耗(最大值):3.8W (Ta), 140W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:5-DFN (5x6) (8-SOFL)
包/箱:8-PowerTDFN, 5 Leads

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