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RJK03E0DNS-00#J5

RJK03E0DNS-00#J5

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制造商部分
RJK03E0DNS-00#J5
制造商
Renesas Electronics America
描述
POWER FIELD-EFFECT TRANSISTOR
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
140000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:30A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:5.6mOhm @ 15A, 10V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:15.2 nC @ 4.5 V
vgs (最大值):-
输入电容 (ciss) (max) @ vds:3050 pF @ 10 V
场效应管特征:-
功耗(最大值):20W (Tc)
工作温度:150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-HWSON (3.3x3.3)
包/箱:8-PowerWDFN

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