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SCTL35N65G2V

SCTL35N65G2V

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制造商部分
SCTL35N65G2V
制造商
STMicroelectronics
描述
TRANS SJT N-CH 650V PWRFLAT HV
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
88
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):650 V
电流 - 连续漏极 (id) @ 25°c:40A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:67mOhm @ 20A, 20V
vgs(th) (最大值) @ id:5V @ 1mA
栅极电荷 (qg) (max) @ vgs:73 nC @ 20 V
vgs (最大值):+22V, -10V
输入电容 (ciss) (max) @ vds:1370 pF @ 400 V
场效应管特征:-
功耗(最大值):417W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:PowerFlat™ (8x8) HV
包/箱:8-PowerVDFN

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