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DMT67M8LCGQ-13

DMT67M8LCGQ-13

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制造商部分
DMT67M8LCGQ-13
制造商
Zetex Semiconductors (Diodes Inc.)
描述
MOSFET N-CH 60V 16A/64.6A 8DFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
6111
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:16A (Ta), 64.6A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:5.7mOhm @ 20A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:37.5 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:2130 pF @ 30 V
场效应管特征:-
功耗(最大值):900mW (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:V-DFN3333-8 (Type B)
包/箱:8-PowerVDFN

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