Type | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | SiCFET (Silicon Carbide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 20V |
rds on (max) @ id, vgs: | 100mOhm @ 20A, 20V |
vgs(th) (最大值) @ id: | 3.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 105 nC @ 20 V |
vgs (最大值): | +25V, -10V |
输入电容 (ciss) (max) @ vds: | 1700 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 270W (Tc) |
工作温度: | -55°C ~ 200°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | HiP247™ |
包/箱: | TO-247-3 |
图片 | 零件号 | 描述 | Stock / Unit Price |
---|---|---|---|
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BSB881N03LX3GXUMA1IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
有存货: 260,000 $0.96000 |
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RLD03N06CLESM |
N-CHANNEL POWER MOSFET |
有存货: 1,025 $0.77000 |
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BST113AIR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
有存货: 0 $0.84000 |
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2SK3404-Z-E1-AZRenesas Electronics America |
POWER FIELD-EFFECT TRANSISTOR |
有存货: 31,600 $1.18000 |
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IPB097N08N3GATMA1IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
有存货: 0 $0.57334 |
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IRF9542 |
P-CHANNEL POWER MOSFET |
有存货: 497 $1.64000 |
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H5N3301LSTL-ERenesas Electronics America |
N-CHANNEL POWER MOSFET |
有存货: 2,000 $1.59000 |
![]() |
BSF885N03LQ3GXUMA1IR (Infineon Technologies) |
N-CHANNEL POWER MOSFET |
有存货: 465,000 $0.41000 |
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SQJ401EP-T2_GE3Vishay / Siliconix |
MOSFET P-CH 12V 32A PPAK SO-8 |
有存货: 0 $0.90000 |
![]() |
RJK03P7DPA-WS#J5ARenesas Electronics America |
N-CHANNEL POWER MOSFET |
有存货: 2,950 $0.68000 |