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IPC022N03L3X1SA1

IPC022N03L3X1SA1

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制造商部分
IPC022N03L3X1SA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 30V 1A SAWN ON FOIL
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
12792
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Bulk
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:1A (Tj)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:50mOhm @ 2A, 10V
vgs(th) (最大值) @ id:2.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):-
工作温度:-
安装类型:Surface Mount
供应商设备包:Sawn on foil
包/箱:Die

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