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NVMJS1D4N06CLTWG

NVMJS1D4N06CLTWG

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制造商部分
NVMJS1D4N06CLTWG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 60V 39A/262A 8LFPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5796
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:39A (Ta), 262A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:1.3mOhm @ 50A, 10V
vgs(th) (最大值) @ id:2V @ 280µA
栅极电荷 (qg) (max) @ vgs:103 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:7430 pF @ 30 V
场效应管特征:-
功耗(最大值):4W (Ta), 180W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:8-LFPAK
包/箱:SOT-1205, 8-LFPAK56

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