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G3R20MT17N

G3R20MT17N

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制造商部分
G3R20MT17N
制造商
GeneSiC Semiconductor
描述
SIC MOSFET N-CH 100A SOT227
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5714
在线数据表
-
询问

Product Specifications

Type 描述
系列:G3R™
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiCFET (Silicon Carbide)
漏源电压 (vdss):1700 V
电流 - 连续漏极 (id) @ 25°c:100A (Tc)
驱动电压(最大 rds on,最小 rds on):15V
rds on (max) @ id, vgs:26mOhm @ 75A, 15V
vgs(th) (最大值) @ id:2.7V @ 15mA
栅极电荷 (qg) (max) @ vgs:400 nC @ 15 V
vgs (最大值):±15V
输入电容 (ciss) (max) @ vds:10187 pF @ 1000 V
场效应管特征:-
功耗(最大值):523W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Chassis Mount
供应商设备包:SOT-227
包/箱:SOT-227-4, miniBLOC

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