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NTH4L080N120SC1

NTH4L080N120SC1

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制造商部分
NTH4L080N120SC1
制造商
Sanyo Semiconductor/ON Semiconductor
描述
TRANS SJT N-CH 1200V 29A TO247-4
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
416
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:SiC (Silicon Carbide Junction Transistor)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:29A (Tc)
驱动电压(最大 rds on,最小 rds on):20V
rds on (max) @ id, vgs:110mOhm @ 20A, 20V
vgs(th) (最大值) @ id:4.3V @ 5mA
栅极电荷 (qg) (max) @ vgs:56 nC @ 20 V
vgs (最大值):+25V, -15V
输入电容 (ciss) (max) @ vds:1670 pF @ 800 V
场效应管特征:-
功耗(最大值):170W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-247-4
包/箱:TO-247-4

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