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NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG

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制造商部分
NTMTSC1D6N10MCTXG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 100V 35A/267A 8TDFNW
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5240
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):100 V
电流 - 连续漏极 (id) @ 25°c:35A (Ta), 267A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:1.7mOhm @ 90A, 10V
vgs(th) (最大值) @ id:4V @ 650µA
栅极电荷 (qg) (max) @ vgs:106 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:7630 pF @ 50 V
场效应管特征:-
功耗(最大值):5.1W (Ta), 291W (Tc)
工作温度:-55°C ~ 175°C (TJ)
安装类型:Surface Mount
供应商设备包:8-TDFNW (8.3x8.4)
包/箱:8-PowerTDFN

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