Type | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | GaNFET (Cascode Gallium Nitride FET) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 46.5A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 41mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 4.8V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 22 nC @ 0 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1500 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 156W (Tc) |
工作温度: | -55°C ~ 150°C |
安装类型: | Through Hole |
供应商设备包: | TO-247-3 |
包/箱: | TO-247-3 |
图片 | 零件号 | 描述 | Stock / Unit Price |
---|---|---|---|
![]() |
NTD4909NT4HSanyo Semiconductor/ON Semiconductor |
NFET DPAK 30V 41A 8MO |
有存货: 40,000 $0.18000 |
![]() |
IPC60R075CPX1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
有存货: 0 $9.53000 |
![]() |
PSMNR51-25YLHXNexperia |
MOSFET N-CH 25V 380A LFPAK56 |
有存货: 0 $1.99000 |
![]() |
RJK2017DPE-00#J3Renesas Electronics America |
N-CHANNEL POWER MOSFET |
有存货: 23,000 $1.77000 |
![]() |
2SK3326(9)AZRenesas Electronics America |
DISCRETE / POWER MOSFET |
有存货: 0 $3.64000 |
![]() |
2SK1399-T2B-ARenesas Electronics America |
SMALL SIGNAL N-CHANNEL MOSFET |
有存货: 83,090 $0.10000 |
![]() |
IPC60R099C6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
有存货: 0 $4.36555 |
![]() |
SQJ412EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 40V 32A PPAK SO-8 |
有存货: 0 $0.70224 |
![]() |
2SJ463A(91)-T1-ARenesas Electronics America |
SMALL SIGNAL P-CHANNEL MOSFET |
有存货: 57,000 $0.12000 |
![]() |
2SJ358(0)-T1-AYRenesas Electronics America |
P-CHANNEL POWER MOSFET |
有存货: 0 $0.73000 |