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IGT40R070D1E8220ATMA1

IGT40R070D1E8220ATMA1

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制造商部分
IGT40R070D1E8220ATMA1
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 400V 31A HSOF-8-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
5068
在线数据表
-
询问

Product Specifications

Type 描述
系列:CoolGaN™
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):400 V
电流 - 连续漏极 (id) @ 25°c:31A (Tc)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:1.6V @ 2.6mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:382 pF @ 320 V
场效应管特征:-
功耗(最大值):125W (Tc)
工作温度:0°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PG-HSOF-8-3
包/箱:8-PowerSFN

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