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NTTFS1D2N02P1E

NTTFS1D2N02P1E

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制造商部分
NTTFS1D2N02P1E
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 25V 23A/180A 8PQFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
197138000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):25 V
电流 - 连续漏极 (id) @ 25°c:23A (Ta), 180A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:1mOhm @ 38A, 10V
vgs(th) (最大值) @ id:2V @ 934µA
栅极电荷 (qg) (max) @ vgs:24 nC @ 4.5 V
vgs (最大值):+16V, -12V
输入电容 (ciss) (max) @ vds:4040 pF @ 13 V
场效应管特征:-
功耗(最大值):820mW (Ta), 52W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:8-PQFN (3.3x3.3)
包/箱:8-PowerWDFN

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