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RV4E031RPHZGTCR1

RV4E031RPHZGTCR1

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制造商部分
RV4E031RPHZGTCR1
制造商
ROHM Semiconductor
描述
MOSFET P-CH 30V 3.1A DFN1616-6W
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4700
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q101
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:3.1A (Ta)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:105mOhm @ 3.1A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:4.8 nC @ 5 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:460 pF @ 10 V
场效应管特征:-
功耗(最大值):1.5W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:DFN1616-6W
包/箱:6-PowerWFDFN

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