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NTLJS4D7N03HTAG

NTLJS4D7N03HTAG

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制造商部分
NTLJS4D7N03HTAG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 25V 11.6A 6PQFN
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
9000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):25 V
电流 - 连续漏极 (id) @ 25°c:11.6A (Ta)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:4.1mOhm @ 10A, 10V
vgs(th) (最大值) @ id:2.1V @ 250µA
栅极电荷 (qg) (max) @ vgs:14 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:851 pF @ 15 V
场效应管特征:-
功耗(最大值):860mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:6-PQFN (2x2)
包/箱:6-PowerWDFN

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