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SISS76LDN-T1-GE3

SISS76LDN-T1-GE3

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制造商部分
SISS76LDN-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET N-CH 70V 19.6A/67.4A PPAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
29
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET® Gen IV
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):70 V
电流 - 连续漏极 (id) @ 25°c:19.6A (Ta), 67.4A (Tc)
驱动电压(最大 rds on,最小 rds on):3.3V, 4.5V
rds on (max) @ id, vgs:6.25mOhm @ 10A, 4.5V
vgs(th) (最大值) @ id:1.6V @ 250µA
栅极电荷 (qg) (max) @ vgs:33.5 nC @ 4.5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:2780 pF @ 35 V
场效应管特征:-
功耗(最大值):4.8W (Ta), 57W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:PowerPAK® 1212-8SH
包/箱:PowerPAK® 1212-8SH

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